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Proceedings Paper

Intermixing effect on asymmetric quantum well
Author(s): Guibin Chen; Zhifeng Li; Zhongli Miao; Xiaoshuang Chen; Wei Lu
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Paper Abstract

Ion implantation enhanced intermixing of quantum well has become an important technology in device fabrication and material modification. We report the intermixing effect in a single asymmetric coupled quantum well (GaAs/AlGaAs) at different ion implantation dose by photoluminescence. More than 80meV of blue shift of the interband transition was observed before rapid thermal annealing process. It indicates that the intermixing has almost finished during the implantation process. A diffusion length of 1nm is obtained by the theoretical analysis.

Paper Details

Date Published: 5 December 2002
PDF: 4 pages
Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.453828
Show Author Affiliations
Guibin Chen, Shanghai Institute of Technical Physics (China)
Zhifeng Li, Shanghai Institute of Technical Physics (China)
Zhongli Miao, Shanghai Institute of Technical Physics (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4795:
Materials for Infrared Detectors II
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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