Share Email Print
cover

Proceedings Paper

Artificial high-temperature superconducting structures
Author(s): C. Aruta; Giusepe Balestrino; S. Lavanga; P. G. Medaglia; P. Orgiani; Antonello Tebano
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

(BaCuO2+δ)m/(CaCuO2)2 superconducting artificial structures were synthesized by layer by layer pulsed laser deposition. The interlayer coupling between adjacent superconducting CaCuO2 blocks was investigated. The thickness of the BaCuO2+δ charge reservoir (CR) layer was gradually increased up to m=10. It was found that interlayer coupling is not essential for high Tc superconductivity: giant CR blocks, thicker than 20 angstrom, (m ≈ 5), depress only moderately Tc while increase the 2D character of superconductivity. Furthermore hetero-epitaxial (BaCuO2+δ)m/(CaCuO2)2/(BaCuO2+δ)m tri-layers made of a single superconducting block sandwiched between two CR blocks were deposited. Electrical transport measurements showed that such ultra thin structures are superconducting with Tc up to about 60 K and critical current densities (at 4 K) as high as 108 A cm-2. Such finding confirmed the occurrence of purely intralayer superconductivity in these artificial structures.

Paper Details

Date Published: 7 November 2002
PDF: 10 pages
Proc. SPIE 4811, Superconducting and Related Oxides: Physics and Nanoengineering V, (7 November 2002); doi: 10.1117/12.453808
Show Author Affiliations
C. Aruta, Univ. di Roma Tor Vergata (Italy)
Giusepe Balestrino, Univ. di Roma Tor Vergata (Italy)
S. Lavanga, Univ. di Roma Tor Vergata (Italy)
P. G. Medaglia, Univ. di Roma Tor Vergata (Italy)
P. Orgiani, Univ. di Roma Tor Vergata (Italy)
Antonello Tebano, Univ. di Roma Tor Vergata (Italy)


Published in SPIE Proceedings Vol. 4811:
Superconducting and Related Oxides: Physics and Nanoengineering V
Ivan Bozovic; Davor Pavuna, Editor(s)

© SPIE. Terms of Use
Back to Top