Share Email Print

Proceedings Paper

Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report the growth of HgCdTe by metal organic vapor phase epitaxy (MOVPE), using (211)B CdTe/Si substrates grown by molecular beam epitaxy (MBE). The surface morphology of these films is very smooth. Morphological defects are primarily oval type void defects with the density of 500cm-2. The etch pit densities (EPD) and full widths at half maximum (FWHM) of x-ray rocking curves exhibit that the grown epilayers replicate exactly the structural properties of substrate. The Hall parameters of undoped HgCdTe layers show anomalous n-type behavior with temperature. Long time annealing under Hg-saturated condition found to deteriorate the transport properties of HgCdTe layers resulting from the possible in corporation of impurities in the layers. Mid wave infrared (MWIR) photovoltaic devices have been fabricated from n on p HgCdTe films. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for mesa delineation and ZnS surface passivation. The dynamic resistance-area product at zero bias voltage for a temperature of 77K is 4000 ohm-cm2. But RoA values are scattered drastically. In some detectors, RoA values are less than 100 ohm-cm2. It is thought that these results are related with localized defects or anomalous transport properties of epilayer.

Paper Details

Date Published: 5 December 2002
PDF: 7 pages
Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.453801
Show Author Affiliations
Sang-Hee Suh, Korea Institute of Science and Technology (South Korea)
Jin-Sang Kim, Korea Institute of Science and Technology (South Korea)
Dae-Won Seo, Korea Institute of Science and Technology (South Korea)
Suk-Ryong Hahn, Univ. of Illinois/Chicago (United States)
Sivalingam Sivananthan, Univ. of Illinois/Chicago (United States)

Published in SPIE Proceedings Vol. 4795:
Materials for Infrared Detectors II
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

© SPIE. Terms of Use
Back to Top