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Proceedings Paper

Single-photon-emitting diode
Author(s): Martin B. Ward; Zhiliang Yuan; R. Mark Stevenson; Beata E. Kardynal; Charlene J. Lobo; Ken Cooper; David A. Ritchie; Andrew J. Shields
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Paper Abstract

We report the realization of the first electrically-driven single photon source. The device is based on a GaAs p-i-n diode containing self-assembled InAs quantum dots embedded within the i-region. Time resolved electroluminescence from the device yields information on the radiative lifetimes of the single quantum dots involved. Applying a continuous current a dip is measured in the second-order correlation function at zero time delay indicating that the luminescence is antibunched. Under pulsed excitation by subnanosecond voltage pulses, strong suppression of multi-photon pulses is achieved with respect to a laser of the same average intensity. The results suggest that conventional semiconductor technology can be used to mass-produce a single photon source for applications in quantum information technology.

Paper Details

Date Published: 9 December 2002
PDF: 8 pages
Proc. SPIE 4821, Free-Space Laser Communication and Laser Imaging II, (9 December 2002); doi: 10.1117/12.453760
Show Author Affiliations
Martin B. Ward, Toshiba Research Europe Ltd. (United Kingdom)
Zhiliang Yuan, Toshiba Research Europe Ltd. (United Kingdom)
R. Mark Stevenson, Toshiba Research Europe Ltd. (United Kingdom)
Beata E. Kardynal, Toshiba Research Europe Ltd. (United Kingdom)
Charlene J. Lobo, Univ. of Cambridge (United Kingdom)
Ken Cooper, Univ. of Cambridge (United Kingdom)
David A. Ritchie, Univ. of Cambridge (United Kingdom)
Andrew J. Shields, Toshiba Research Europe Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 4821:
Free-Space Laser Communication and Laser Imaging II
Jennifer C. Ricklin; David G. Voelz, Editor(s)

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