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Proceedings Paper

Investigation of nonlinear optical properties of ion-implanted and high-pulse laser deposition SiC:Ge: waveguide
Author(s): Abdalla M. Darwish; A. Elsamadecy; Brent D. Koplitz; Harold J. Colclough; G. Gomlak; R. Combs; A. Jalbout; Mohan D. Aggarwal; Dariush Ila
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Paper Abstract

The feasibility of using the combined advantage of ion implantation and laser ablation to form a waveguide has been investigated in SiC implanted with Oxygen 2 MeV wiht concentration of 2-3 × 1017 ions/cm2 and Au2+ 2 MeV with concentration of 1x1016 ions/cm2. Then a 2-micron Ge thin film was deposited on the surface with pulsed laser ablation to form a multilayer waveguide. It is shown that the waveguide acts as a laser wavelength differentiator under thermal stress achieving high selcitivy of wavelength in 9.6 micron using CO2 laser. Electron paramagnetic results ffor this material will be presented as well to show the possible sites of doped and implanted ions.

Paper Details

Date Published: 20 November 2002
PDF: 10 pages
Proc. SPIE 4803, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII, (20 November 2002); doi: 10.1117/12.453582
Show Author Affiliations
Abdalla M. Darwish, Dillard Univ. (United States)
Laser Matter Research Lab. (United States)
A. Elsamadecy, Univ. of Alabama in Huntsville (United States)
Brent D. Koplitz, Tulane Univ. (United States)
Harold J. Colclough, Dillard Univ. (United States)
G. Gomlak, Tulane Univ. (United States)
R. Combs, Tulane Univ. (United States)
A. Jalbout, Dillard Univ. (United States)
Mohan D. Aggarwal, Alabama A&M Univ. (United States)
Dariush Ila, Alabama A&M Univ. (United States)


Published in SPIE Proceedings Vol. 4803:
Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII
Francis T. S. Yu; Ruyan Guo, Editor(s)

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