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Proceedings Paper

Phase-change material for use in rewritable dual-layer optical disk
Author(s): Noboru Yamada; Rie Kojima; Mayumi Uno; Tetsuya Akiyama; Hideki Kitaura; Kenji Narumi; Kenichi Nishiuchi
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Paper Abstract

A thin film of Sn-doped and GeTe-rich GeTe-Sb2Te3 shows characteristics that make it suitable for use in rewritable dual-layer optical disks employing a violet laser. By increasing the GeTe component form Ge2Sb2Te5 to Ge4Sb2Te7, and Ge8Sb2Te11, optical changes were increased. By substituting Sn for a proposition of Ge in these compositions, crystallization rates are greatly increased and even a 5 nm-thick film showed a very short laser-crystallization time of less than 50 ns. The material film was successfully applied to Layer 0 of rewritable dual-layer disk: capacity of 27 GB and a 33 Mbps data transfer rate were confirmed for a disk using a conventional 0.6 mm substrate, and 45 GB capacity and the same data transfer rate were obtained for another disk using thin cover layer 0.1 mm thick.

Paper Details

Date Published: 10 January 2002
PDF: 9 pages
Proc. SPIE 4342, Optical Data Storage 2001, (10 January 2002); doi: 10.1117/12.453428
Show Author Affiliations
Noboru Yamada, Matsushita Electric Industrial Co., Ltd. (Japan)
Rie Kojima, Matsushita Electric Industrial Co., Ltd. (Japan)
Mayumi Uno, Matsushita Electric Industrial Co., Ltd. (Japan)
Tetsuya Akiyama, Matsushita Electric Industrial Co., Ltd. (Japan)
Hideki Kitaura, Matsushita Electric Industrial Co., Ltd (Japan)
Kenji Narumi, Matsushita Electric Industrial Co., Ltd. (Japan)
Kenichi Nishiuchi, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 4342:
Optical Data Storage 2001

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