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Proceedings Paper

Crystallization of GeSbTe and AgInSbTe under dynamic conditions
Author(s): Kelly Daly Flynn; David A. Strand
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Paper Abstract

Phase change materials, originally invented by S.R. Ovshinsky, are used in the leading standardized rewriteable optical storage products. GeSbTe was introduced as a high speed switching material with good cycling characteristics. AgInSbTe was originally developed for lower speed applications. These two materials systems have both differences and similarities. We compare the structural and dynamic write aspects of GeSbTe and AgInSbTe. We find the crystal structures of both systems to be simple, high-symmetry structures with low amorphous backgrounds. Under dynamic test conditions, GeSbTe crystallizes with bulk nucleation dominant behavior. At low speeds, AgInSbTe crystallizes with an edge growth mechanism but switches to bulk nucleation at high speeds. We find that in decreasing the laser spot size, there does not appear to be an improvement in erase or erase speed.

Paper Details

Date Published: 10 January 2002
PDF: 9 pages
Proc. SPIE 4342, Optical Data Storage 2001, (10 January 2002); doi: 10.1117/12.453396
Show Author Affiliations
Kelly Daly Flynn, Energy Conversion Devices, Inc. (United States)
David A. Strand, Energy Conversion Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 4342:
Optical Data Storage 2001

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