Share Email Print
cover

Proceedings Paper

Large-format 1280 x 1024 full-frame CCD image sensor with a lateral-overflow drain and transparent gate electrode
Author(s): Eric G. Stevens; Stephen L. Kosman; John C. Cassidy; Winchyi Chang; Wesley A. Miller
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This paper describes the design and performance of a large format, 1280(H) X 1024(V) pixel, full-frame CCD image sensor. A lateral-overflow drain (LOD) is incorporated for antiblooming control while providing high responsivity and photographic speed. The use of an LOD also provides high optical overload protection, and an extremely linear photoresponse compared to that of its vertical-overflow drain (VOD) counterpart owing to the near-unity nonideality factor of the LOD structure. Optical overloads in excess of 43,000 times saturation have been measured without blooming, and the photoresponse nonlinearity at saturation is less than 1. The LOD structure is also much easier to fabricate than a typical VOD structure and is much less sensitive to processing and drain bias variations. The device''s two-phase CCD pixels measure 16 micrometers on a side. The LOD structure occupies roughly 30 of this area using conservative design rules. Since much of this area is required for overlap of the various layers of the color-filter array (CFA), the incorporation of the LOD does not result in any significant additional loss of fill factor. To further enhance the detector''s sensitivity, a transparent gate electrode process has been implemented which replaces one of the CCD''s polysilicon electrodes with indium-tin oxide (ITO). The ITO gate electrode increases the quantum efficiency of the detector from 1.5 at a wavelength of 400 nm. The responsivity of the transparent gate electrode structure over the visible spectrum is 210 nA/lux. This is more than 38 higher than that of the all-polysilicon gate structure.

Paper Details

Date Published: 1 July 1991
PDF: 9 pages
Proc. SPIE 1447, Charge-Coupled Devices and Solid State Optical Sensors II, (1 July 1991); doi: 10.1117/12.45331
Show Author Affiliations
Eric G. Stevens, Eastman Kodak Co. (United States)
Stephen L. Kosman, Eastman Kodak Co. (United States)
John C. Cassidy, Eastman Kodak Co. (United States)
Winchyi Chang, Eastman Kodak Co. (United States)
Wesley A. Miller, Eastman Kodak Co. (United States)


Published in SPIE Proceedings Vol. 1447:
Charge-Coupled Devices and Solid State Optical Sensors II
Morley M. Blouke, Editor(s)

© SPIE. Terms of Use
Back to Top