Share Email Print
cover

Proceedings Paper

Quantum efficiency model for p+-doped back-illuminated CCD imager
Author(s): Chin Ming Huang; Bernard B. Kosicki; Joseph R. Theriault; James A. Gregory; Barry E. Burke; Brett W. Johnson; Edward T. Hurley
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

An analytical model has been developed for predicting the spectral response of thinned, p+-doped back-illuminated charge-coupled device (CCD) imagers. The device is divided into two regions: a thin, uniformly doped p+ layer used to passivate the illuminated back surface from external electrical effects, and a p- region that extends from the p+ region across the approximately 10-micrometers thickness of the device to the potential well in the buried channel. The one-dimensional steady-state continuity equation for low-injection conditions has been solved analytically for the surface p+ region, which is characterized by electron diffusion length and coefficients appropriate for the doping level and a surface recombination velocity Sn that represents the loss of photoelectrons at the surface. All photoelectrons generated in the p- region are assumed to be collected in the buried channel because of the long diffusion length and the presence of a field sweeping the carriers into the CCD channel. The effect of multiple internal reflections on photoabsorption at long wavelengths is included. The quantum efficiency of this device is calculated as a function of the depth and recombination velocity of the p+ surface layer, using Sn as the only independent fitting parameter, and matches experimental results well over the wavelength range from 360 to 1100 nm.

Paper Details

Date Published: 1 July 1991
PDF: 9 pages
Proc. SPIE 1447, Charge-Coupled Devices and Solid State Optical Sensors II, (1 July 1991); doi: 10.1117/12.45321
Show Author Affiliations
Chin Ming Huang, Lincoln Lab./MIT (United States)
Bernard B. Kosicki, Lincoln Lab./MIT (United States)
Joseph R. Theriault, Lincoln Lab./MIT (United States)
James A. Gregory, Lincoln Lab./MIT (United States)
Barry E. Burke, Massachusetts Institute of Technology (United States)
Brett W. Johnson, Lincoln Lab./MIT (United States)
Edward T. Hurley, Lincoln Lab./MIT (United States)


Published in SPIE Proceedings Vol. 1447:
Charge-Coupled Devices and Solid State Optical Sensors II
Morley M. Blouke, Editor(s)

© SPIE. Terms of Use
Back to Top