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Proceedings Paper

Quantum efficiency model for p+-doped back-illuminated CCD imager
Author(s): Chin Ming Huang; Bernard B. Kosicki; Joseph R. Theriault; James A. Gregory; Barry E. Burke; Brett W. Johnson; Edward T. Hurley
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Paper Abstract

An analytical model has been developed for predicting the spectral response of thinned, p+-doped back-illuminated charge-coupled device (CCD) imagers. The device is divided into two regions: a thin, uniformly doped p+ layer used to passivate the illuminated back surface from external electrical effects, and a p- region that extends from the p+ region across the approximately 10-micrometers thickness of the device to the potential well in the buried channel. The one-dimensional steady-state continuity equation for low-injection conditions has been solved analytically for the surface p+ region, which is characterized by electron diffusion length and coefficients appropriate for the doping level and a surface recombination velocity Sn that represents the loss of photoelectrons at the surface. All photoelectrons generated in the p- region are assumed to be collected in the buried channel because of the long diffusion length and the presence of a field sweeping the carriers into the CCD channel. The effect of multiple internal reflections on photoabsorption at long wavelengths is included. The quantum efficiency of this device is calculated as a function of the depth and recombination velocity of the p+ surface layer, using Sn as the only independent fitting parameter, and matches experimental results well over the wavelength range from 360 to 1100 nm.

Paper Details

Date Published: 1 July 1991
PDF: 9 pages
Proc. SPIE 1447, Charge-Coupled Devices and Solid State Optical Sensors II, (1 July 1991); doi: 10.1117/12.45321
Show Author Affiliations
Chin Ming Huang, Lincoln Lab./MIT (United States)
Bernard B. Kosicki, Lincoln Lab./MIT (United States)
Joseph R. Theriault, Lincoln Lab./MIT (United States)
James A. Gregory, Lincoln Lab./MIT (United States)
Barry E. Burke, Massachusetts Institute of Technology (United States)
Brett W. Johnson, Lincoln Lab./MIT (United States)
Edward T. Hurley, Lincoln Lab./MIT (United States)


Published in SPIE Proceedings Vol. 1447:
Charge-Coupled Devices and Solid State Optical Sensors II
Morley M. Blouke, Editor(s)

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