Share Email Print

Proceedings Paper

High-speed light-induced photorefractive change in hydrogenated amorphous silicon
Author(s): Charles M. Fortmann; Nobuhiro Hata
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In recent years the prospect of engineering an integrated photonic technology based on amorphous silicon-based has focused efforts on providing a unified understanding of the optical properties of this material. From a optical properties prospective the science of amorphous silicon is most transparent from a nano-crystalline material framework. Of particular interest for photonic engineering is the tunable range of the refractive index in amorphous silicon, the fast and slow light induced changes in epsilon 1 and 2, the means by which to deposit films of sufficient thickness and smoothness for the photonic application and the relationships among deposition conditions, material properties, and in particular the optical parameters. The present work reviews some of the previous work and examines the experimental and theoretical basis for the fast light induced refractive index change with the hope of providing the insight needed for device engineering. This work suggests several novel designs for light amorphous silicon based light valves and other devices.

Paper Details

Date Published: 20 November 2002
PDF: 10 pages
Proc. SPIE 4803, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII, (20 November 2002); doi: 10.1117/12.452634
Show Author Affiliations
Charles M. Fortmann, SUNY/Stony Brook (United States)
Nobuhiro Hata, National Institute of Advanced Industrial Science and Technology (Japan)

Published in SPIE Proceedings Vol. 4803:
Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII
Francis T. S. Yu; Ruyan Guo, Editor(s)

© SPIE. Terms of Use
Back to Top