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Proceedings Paper

Measurement of the complex index of refraction of semiconductors
Author(s): Richard R. Zito
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Paper Abstract

A simple method is presented for measuring boththe real and imaginary parts of low resistivity semiconductors. The method depends on making two reflection measurements from a bulk sample of material. One measurement is made at normal incidence and the other at an arbitrary angle of incidence greater than zero, but less than 90°. Only a simple reflectometer is required. The method offers an alterantive to traditional, and more complex Brewster angle measurements or ellipsometry.

Paper Details

Date Published: 20 November 2002
PDF: 6 pages
Proc. SPIE 4803, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII, (20 November 2002); doi: 10.1117/12.452621
Show Author Affiliations
Richard R. Zito, Richard R. Zito R&D Corp. (United States)


Published in SPIE Proceedings Vol. 4803:
Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII
Francis T. S. Yu; Ruyan Guo, Editor(s)

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