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Proceedings Paper

Reduction in leakage current of InGaN-based light-emitting diodes by N2O plasma passivation
Author(s): Hyun Min Kim; Chul Huh; Seong-Ju Park
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Paper Abstract

The effect of N2O plasma treatment on the reverse leakage currents of InGaN/GaN multiple-quantum well (MQW) light-emitting diodes (LEDs) was investigated. The reverse leakage current of MQW LED chip treated with an N2O plasma was decreased by about 3 orders of magnitude at low reverse voltages compared to that of untreated sample. This could be attributed to the passivation of surface and sidewall damages that were produced by the dry etching process to obtain a reliable pattern transfer. These results suggest that the nonradiative leakage current MQW LED chip can be greatly reduced by N2O plasma passivation, resulting in an improvement in the performance and reliability of MQW LED chip.

Paper Details

Date Published: 26 November 2002
PDF: 8 pages
Proc. SPIE 4776, Solid State Lighting II, (26 November 2002); doi: 10.1117/12.452566
Show Author Affiliations
Hyun Min Kim, Samsung Electro-Mechanics (South Korea)
Chul Huh, Kwangju Institute of Science and Technology (South Korea)
Seong-Ju Park, Kwangju Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 4776:
Solid State Lighting II
Ian T. Ferguson; Nadarajah Narendran; Steven P. DenBaars; Yoon-Soo Park, Editor(s)

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