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Proceedings Paper

Using scanning probe microscopy and nanomoter surface profiler of DEDTAK for determination of thermal stress in quasi-monolithic integration technology (QMIT)
Author(s): Mojtaba Joodaki; Teoman Senyildiz; Guenter Kompa; Rainer Kassing; Hartmut Hillmer
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Paper Abstract

In this paper, application of scanning probe microscopy (SPM) and nanometer surface profiler of DEKTAK for determination of thermal stress in standard structure of QMIT is described. A three dimension finite element (3DFE) thermal stress simulator, a scanning probe microscopy measurements and nanometer surface profiler accompanied with a Peltier element (PE) have been used to determine the thermal stress distribution in the standard structure of QMIT. In this method by measuring and mapping the surface profile of Si-wafer around the embedded devices using SPM and DEKTAK the induced thermal stress is determined. Effects of different parameters such as baking temperature, power dissipation of the embedded GaAs-FET, geometry and elastic properties of thermal conductive epoxy have been described in details. Remarkable agreement between calculated and measured displacements created by thermal stress was found.

Paper Details

Date Published: 27 December 2001
PDF: 11 pages
Proc. SPIE 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing, (27 December 2001); doi: 10.1117/12.452550
Show Author Affiliations
Mojtaba Joodaki, Univ. Gesamthochschule Kassel (Germany)
Teoman Senyildiz, Univ. Gesamthochschule Kassel (Germany)
Guenter Kompa, Univ. Gesamthochschule Kassel (Germany)
Rainer Kassing, Univ. Gesamthochschule Kassel (Germany)
Hartmut Hillmer, Univ. Gesamthochschule Kassel (Germany)

Published in SPIE Proceedings Vol. 4468:
Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing
Emile J. Knystautas; Wiley P. Kirk; Valerie Browning, Editor(s)

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