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Proceedings Paper

Effects of nitrogen plasma immersion ion implantation in silicon
Author(s): Raj Kumar; Mukesh Kumar; P. J. George; K. S. Chari; Subroto Mukherjee
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Paper Abstract

Silicon wafers of p and n-types of 1 to 10 ohm-cm resistivity were implanted with nitrogen ions employing Plasma Immersion Ion Implantation (PIII) technique. Implantation were carried out at three doses corresponding to low (approximately 1013 /cm2), moderate (approximately 1015 /cm2) and high (approximately 1017 /cm2) dose regimes. Metal-silicon devices were fabricated using conventional semiconductor processing techniques. One set of the samples was annealed in forming gas ambient. Electrical characterization was done on all the devices. Change in reverse and forward current was observed with dose of implanted ions. The barrier height of the n- type sample decreases with increase in implanted ion dose, where as in the case of p-type silicon, barrier height was found increasing with dose. At high doses the top layer of both n and p-type silicon become nitrogen rich and exhibits optical properties different from that of unimplanted silicon as measured by ellipsometry. With the nitrogen rich layer, the device behaved like metal-insulator-silicon structure whose electrical characteristics have been studied. Sputtering effects of the nitrogen ions during implantation were also studied.

Paper Details

Date Published: 27 December 2001
PDF: 9 pages
Proc. SPIE 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing, (27 December 2001); doi: 10.1117/12.452548
Show Author Affiliations
Raj Kumar, Semiconductor Complex Ltd. (India)
Mukesh Kumar, Kurukshetra Univ. (India)
P. J. George, Kurukshetra Univ. (India)
K. S. Chari, Ministry of Information Technology (India)
Subroto Mukherjee, Facilitation Ctr. for Industrial Plasma Technologies (India)


Published in SPIE Proceedings Vol. 4468:
Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing
Emile J. Knystautas; Wiley P. Kirk; Valerie Browning, Editor(s)

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