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Proceedings Paper

HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching
Author(s): Tam T. Nguyen; John M. Dell; Charles A. Musca; Jarek Antoszewski; Lorenzo Faraone
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Paper Abstract

Reactive ion etching (RIE) is known to type convert p-type HgCdTe to n-type, thus providing a method for p-n junction formation for photodiode fabrication. Mid-wavelength infrared (MWIR) n-on-p photodiodes fabricated using RIE induced p-to-n type conversion have already been demonstrated and show excellent performance. This paper will report on the successful application of RIE junction formation technology for long-wavelength infrared (LWIR) HgCdTe photodiodes, and compares the device performance of photodiodes fabricated on vacancy and extrinsically doped p-type HgCdTe. The diode current versus bias voltage (I-V) characteristic of these devices have also been measured as a function of temperature in the range 20K to 200K with various junction areas. These results are compared in the light of detailed Hall measurement data obtained from type converted materials.

Paper Details

Date Published: 5 December 2002
PDF: 8 pages
Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.452276
Show Author Affiliations
Tam T. Nguyen, Univ. of Western Australia (Australia)
John M. Dell, Univ. of Western Australia (Australia)
Charles A. Musca, Univ. of Western Australia (Australia)
Jarek Antoszewski, Univ. of Western Australia (Australia)
Lorenzo Faraone, Univ. of Western Australia (Australia)


Published in SPIE Proceedings Vol. 4795:
Materials for Infrared Detectors II
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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