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Proceedings Paper

Optical and electronic characterization on HgCdTe materials
Author(s): Junhao Chu; Young Chang; Zhiming Huang; Yongsheng Gui; X. G. Wang; X. F. Lu; Li He; Dingyuan Tang
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Paper Abstract

Some new results about the optical and electronic characterization on HgCdTe materials have been reported in this paper. The photoluminescence measurements for HgCdTe sample have been performed to characterize the impurities states in HgCdTe and the quality of the crystal perfection. The optical constants in the energy region below, near and above the energy gap for Hg1-xCdxTe materials have been investigated by infrared spectroscopic ellipsometry measurements using a monochromatic dispersion infrared ellipsometer in the wavelength region of 2 to 12.5μm. Variable magnetic field Hall measurements (0-10T) were performed on MBE-grown Hg1-xCdxTe films and on boron ion implanted bulk n-type Hg1-xCdxTe at various temperatures (1.2 ~300K). By a hybrid approach consisting of mobility spectrum (MS) analysis followed by a multi-carrier fitting (MCF) procedure, the contributions to the total conductivity arising from all kinds of carriers in the sample including in the bulk and on the surface layer have been separated. The Cd composition distribution image for HgCdTe sample has been realized by using a thermal image system from measuring the transmittance distribution and calculating the composition distribution.

Paper Details

Date Published: 5 December 2002
PDF: 10 pages
Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.452272
Show Author Affiliations
Junhao Chu, Shanghai Institute of Technical Physics (China)
Young Chang, Shanghai Institute of Technical Physics (China)
Zhiming Huang, Shanghai Institute of Technical Physics (China)
Yongsheng Gui, Shanghai Institute of Technical Physics (China)
X. G. Wang, Shanghai Institute of Technical Physics (China)
X. F. Lu, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)
Dingyuan Tang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4795:
Materials for Infrared Detectors II
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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