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Proceedings Paper

Progress in far-infrared detection technology
Author(s): Yongdong Zhou; Charles R. Becker; Renganathan Ashokan; Yusuf Selamet; Yong Chang; Rita T. Boreiko; Albert L. Betz; Sivalingam Sivananthan
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Paper Abstract

II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.

Paper Details

Date Published: 5 December 2002
PDF: 8 pages
Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.452270
Show Author Affiliations
Yongdong Zhou, Univ. of Illinois/Chicago (United States)
Charles R. Becker, Univ. of Illinois/Chicago (United States)
Physikalisches Institut der Univ. Würzburg (Germany)
Renganathan Ashokan, Univ. of Illinois/Chicago (United States)
Yusuf Selamet, Univ. of Illinois/Chicago (United States)
Yong Chang, Univ. of Illinois/Chicago (United States)
Rita T. Boreiko, Univ. of Colorado/Boulder (United States)
Albert L. Betz, Univ. of Colorado/Boulder (United States)
Sivalingam Sivananthan, Univ. of Illinois/Chicago (United States)


Published in SPIE Proceedings Vol. 4795:
Materials for Infrared Detectors II
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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