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Proceedings Paper

Monte Carlo simulation of electron transport in Si/SiO2 superlattices
Author(s): Marcello Rosini; Carlo Jacoboni; Stefano Ossicini
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Paper Abstract

In this work we investigate the transport properties of Si/SiO2 superlattices with a multiband one-particle Monte Carlo simulator. The band structure of the system is obtained analytically by solving the Kronig-Penney potential in a tight binding approximation along the growth direction z while we have assumed parabolic dispersion in the in-plane directions. We have introduced in the simulator confined optical phonons, both polar and non polar, as scattering mechanisms. Owing to the very flat shape of the bands along the growth direction, very low drift velocities are obtained for vertical transport. However it turns out that for oblique fields, the in-plane component of the electric field strongly influences the transport properties along the vertical direction as effect of carrier heating. In particular higher vertical drift velocities can be obtained.

Paper Details

Date Published: 5 November 2002
PDF: 10 pages
Proc. SPIE 4808, Optical Properties of Nanocrystals, (5 November 2002); doi: 10.1117/12.452215
Show Author Affiliations
Marcello Rosini, INFM (Italy) and Univ. degli Studi di Modena e Reggio Emilia (Italy)
Carlo Jacoboni, INFM (Italy) and Univ. degli Studi di Modena e Reggio Emilia (Italy)
Stefano Ossicini, INFM (Italy) and Univ. degli Studi di Modena e Reggio Emilia (Italy)

Published in SPIE Proceedings Vol. 4808:
Optical Properties of Nanocrystals
Zeno Gaburro, Editor(s)

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