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Proceedings Paper

Light emission in silicon nanostructures
Author(s): David J. Lockwood
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Paper Abstract

The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects for application in silicon-based optoelectronics are assessed.

Paper Details

Date Published: 5 November 2002
PDF: 12 pages
Proc. SPIE 4808, Optical Properties of Nanocrystals, (5 November 2002); doi: 10.1117/12.452153
Show Author Affiliations
David J. Lockwood, National Research Council Canada (Canada)

Published in SPIE Proceedings Vol. 4808:
Optical Properties of Nanocrystals
Zeno Gaburro, Editor(s)

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