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Proceedings Paper

Two-dimensional monolithic lead-chalcogenide on active Si-substrate IRFPA
Author(s): Hans Zogg; Karim Alchalabi; Dmitri S. Zimin
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Paper Abstract

Narrow gap IV-VI layers grown epitaxially on Si(111)-substrates by molecular beam epitaxy exhibit high quality despite the large lattice and thermal expansion mismatch. We present the further development of the first realization of a 2-d narrow gap IR-FPA an a Si-substrate containing the active addressing electronics: A 96 × 128 array with 75μm pitch for row-by row electronic scanning and parallel read-out of the line addressed. Each pixel contains a bare Si-area onto which epitaxial growth occurs, and an access transistor. A MWIR PbTe layer is grown by MBE onto completed Si-read-out substrates at temperatures below 450°C. Photovoltaic sensors are then delineated in the layers. Each pixel is connected to the Si read-out by sputtered Al-stripes. The FPA is mounted in a dewar and demonstrational thermal images are taken.

Paper Details

Date Published: 23 January 2003
PDF: 7 pages
Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); doi: 10.1117/12.452006
Show Author Affiliations
Hans Zogg, Swiss Federal Institute of Technology Zurich (Switzerland)
Karim Alchalabi, Swiss Federal Institute of Technology Zurich (Switzerland)
Dmitri S. Zimin, Swiss Federal Institute of Technology Zurich (Switzerland)


Published in SPIE Proceedings Vol. 4820:
Infrared Technology and Applications XXVIII
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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