Share Email Print
cover

Proceedings Paper

Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches
Author(s): J. David Benson; Andrew J. Stoltz; Andrew W. Kaleczyc; Mike Martinka; Leo Anthony Almeida; Phillip R. Boyd; John H. Dinan
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Factors that affect width and aspect ratio in electron cyclotron resonance (ECR) etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist feature erosion rate. The physical characteristics of the trenches are attributed to ECR plasma etch chemistry.

Paper Details

Date Published: 5 December 2002
PDF: 7 pages
Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.451921
Show Author Affiliations
J. David Benson, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
Andrew J. Stoltz, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
Andrew W. Kaleczyc, E-OIR Measurements, Inc. (United States)
Mike Martinka, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
Leo Anthony Almeida, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
Phillip R. Boyd, Army Research Lab. (United States)
John H. Dinan, U.S. Army Night Vision & Electronic Sensors Directorate (United States)


Published in SPIE Proceedings Vol. 4795:
Materials for Infrared Detectors II
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

© SPIE. Terms of Use
Back to Top