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Proceedings Paper

Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth
Author(s): Giacomo Badano; James W. Garland; Jun Zhao; Sivalingam Sivananthan
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Paper Abstract

A Woollam M88 spectroscopic ellipsometer was used to characterize the molecular beam epitaxy growth nucleation of Hg1-xCdxTe layers on CdZn0.035Te substrates and the substrate temperature prior to the growth. We developed a new approach to ellipsometry data analysis to better determine the substrate temperature. It is based on the accurate determination of the critical point energies and linewidths, which display strong temperature dependence in the CdZnTe system. The new model was able to resolve temperature differences of the order of +/-2.5oC. We also show that ellipsometry can be used to characterize the nucleation of Hg1-xCdxTe on CdZnTe substrates. More work is in progress to assess the run-to-run reproducibility of our temperature measurement, and to further investigate Hg1-xCdxTe nucleation.

Paper Details

Date Published: 5 December 2002
PDF: 6 pages
Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.451906
Show Author Affiliations
Giacomo Badano, Univ. of Illinois/Chicago (United States)
James W. Garland, Univ. of Illinois/Chicago (United States)
Jun Zhao, Univ. of Illinois/Chicago (United States)
Sivalingam Sivananthan, Univ. of Illinois/Chicago (United States)


Published in SPIE Proceedings Vol. 4795:
Materials for Infrared Detectors II
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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