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Proceedings Paper

Progress in MBE growth of HgCdTe at SITP
Author(s): Li He; Yanq Wu; Lu Chen; Meifang Yu; Jun Wu; Jianrong Yang; Yanjin Li; Rijun Ding; Qingyao Zhang
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Paper Abstract

This paper describes some recent results on surface defects, uniformity, dislocation density as well as device applications of MBE growth of HgCdTe at the research center of advanced materials and devices. The features of different surface defects and their origins were studied by using SEM/EDX observations on HgCdTe epilayers with different growth conditions. A variety of surface defects was observed and the formation mechanism was discussed. A good uniformity was observed over 3-in HgCdTe wafers, the Stddev/mean in x and thickness were 1.2%, and 2.7%, respectively. It was found that the dislocation density was sensitive to growth parameters and the composition. The ZnCdTe substrates with 4% mole fraction were found to be suitable for LW HgCdTe, however, for the HgCdTe of shorter wavelengths different Zn composition is required. An average value of EPD of 4.2×105cm−2 was obtained for LW samples. The MBE grown HgCdTe were incorporated into some preliminary FPA devices.

Paper Details

Date Published: 5 December 2002
PDF: 10 pages
Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.451897
Show Author Affiliations
Li He, Shanghai Institute of Technical Physics (China)
Yanq Wu, Shanghai Institute of Technical Physics (China)
Lu Chen, Shanghai Institute of Technical Physics (China)
Meifang Yu, Shanghai Institute of Technical Physics (China)
Jun Wu, Shanghai Institute of Technical Physics (China)
Jianrong Yang, Shanghai Institute of Technical Physics (China)
Yanjin Li, Shanghai Institute of Technical Physics (China)
Rijun Ding, Shanghai Institute of Technical Physics (China)
Qingyao Zhang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4795:
Materials for Infrared Detectors II
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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