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Proceedings Paper

Performance analysis of an infrared sensor (metal/ferroelectric/semiconductor) with high-speed response
Author(s): Chin-Ying Chen; Jyh-Jier Ho; Yean-Kuen Fang; F.-Y. Chen
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Paper Abstract

In this paper, a thin PbTiO3-n-p+ silicon switch sensor has been developed, in which the switching voltage (the turned-on voltage) changes in proportion to the infrared light power. The sensor has a rapid response time of 0.65 μs compared with other conventional infrared sensors. It is attributed to the rapid switching device structure and the smaller pyroelectric layer thickness, 50 nm. Meanwhile in this paper, we have successfully analyzed the rapid switching transient response by using heat conduction and switching theory. The experimental results are in agreement with the theoretical analysis.

Paper Details

Date Published: 5 December 2002
PDF: 12 pages
Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); doi: 10.1117/12.451893
Show Author Affiliations
Chin-Ying Chen, Fortune Institute of Technology (Taiwan)
Jyh-Jier Ho, Fortune Institute of Technology (Taiwan)
Yean-Kuen Fang, National Cheng-Kung Univ. (Taiwan)
F.-Y. Chen, Fortune Institute of Technology (Taiwan)

Published in SPIE Proceedings Vol. 4795:
Materials for Infrared Detectors II
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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