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Proceedings Paper

Measurement of the 100-nm NIST SRM 1963 by lase surface light scattering
Author(s): Thomas A. Germer; George W. Mulholland; Jung Hyeun Kim; Sheryl H. Ehrman
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Paper Abstract

Accurate sizing of particles deposited on surfaces is important for the semiconductor, optical, and data storage industries. The recent availability of accurate light scattering models for non-ideal conditions enables the determination of particle size with a complete assessment of the measurement uncertainties. In this manuscript, we describe a light scattering measurement of the National Institute of Standards and Technology (NIST) Standard Reference Material (SRM) 1963 deposited onto a silicon wafer. The measurement was carried out using 441.6 nm, p-polarized light. The measurement yielded a value of 99.7 nm with an expanded uncertainty (95 % confidence limit) of 1.7 nm. The uncertainty is dominated by the reproducibility of the measurement. Uncertainties in the substrate optical properties, the thickness and optical properties of the substrate oxide, and the shape of the particle dominate the systematic uncertainty.

Paper Details

Date Published: 11 November 2002
PDF: 12 pages
Proc. SPIE 4779, Advanced Characterization Techniques for Optical, Semiconductor, and Data Storage Components, (11 November 2002); doi: 10.1117/12.451747
Show Author Affiliations
Thomas A. Germer, National Institute of Standards and Technology (United States)
George W. Mulholland, National Institute of Standards and Technology (United States)
Jung Hyeun Kim, National Institute of Standards and Technology and Univ. of Maryland/College Park (United States)
Sheryl H. Ehrman, Univ. of Maryland/College Park (United States)


Published in SPIE Proceedings Vol. 4779:
Advanced Characterization Techniques for Optical, Semiconductor, and Data Storage Components
Angela Duparré; Bhanwar Singh, Editor(s)

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