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Proceedings Paper

Studies of behavior of hydrogen in fused silica by ion beam analysis technique
Author(s): Shinji Nagata; Bun Tsuchiya; K. Toh; N. Ohtsu; Tsunemi Kakuta; Naoki Shamoto; Tatsuo Shikama
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Paper Abstract

Retention and thermal release behavior of hydrogen isotopes in fused silica, synthesized silica and optical fibers were investigated by ion beam analysis technique. Initially contained H in the interior of the specimens is about 0.1~0.2 at.% at room temperature, irrespective of the nominal value of OH concentration. Besides, H atoms more than 1 x 1016H/cm2 was found at the surface. The thermal release of the H atoms from the interior was affected by re-trapping at the near surface. During 5 keV ion injection, the retained D in the implanted layer was quickly saturated with a concentration of about 1 x 1021D/cm3. Under the subsequent D injection to doses above 1 x 1018D/cm2, D atoms were trapped with a concentration about 1 at.% in the depth far beyond the projected ranges of D ions. Thermal release of D in the injected layer started at lower temperature than that from the larger depth for lower implantation dose, while the two release curves close to each other for the higher dose. Irradiation of 10 keV He ion into the fused silica caused H up-take in the He implanted depth, where no He atoms were retained.

Paper Details

Date Published: 26 November 2002
PDF: 7 pages
Proc. SPIE 4786, Penetrating Radiation Systems and Applications IV, (26 November 2002); doi: 10.1117/12.451744
Show Author Affiliations
Shinji Nagata, Tohoku Univ. (Japan)
Bun Tsuchiya, Tohoku Univ. (Japan)
K. Toh, Tohoku Univ. (Japan)
N. Ohtsu, Tohoku Univ. (Japan)
Tsunemi Kakuta, Japan Atomic Energy Research Institute (Japan)
Naoki Shamoto, Fujikura Co., Ltd. (Japan)
Tatsuo Shikama, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 4786:
Penetrating Radiation Systems and Applications IV
H. Bradford Barber; Hans Roehrig; F. Patrick Doty; Lisa J. Porter; Edward J. Morton, Editor(s)

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