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Proceedings Paper

Ultrathin organic films for field effect transistors
Author(s): Henrik G. O. Sandberg; Oliver Henze; Henning Sirringhaus; Andreas Kilbinger; W. James Feast; Richard H. Friend
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Paper Abstract

Organic field effect transistors FET have been fabricated with active semiconducting organic thin films that are only a few monolayers thick. The motivation of this study has been to establish a direct correlation between transistor performance and the polymer microstructure in the ultrathin accumulation layer of the transistor. Monolayer thick films of a block copolymer and several model oligomers consisting of a rigid conjugated sexithiophene (6T) block and a flexible polyethyleneoxide (PEO) block have been deposited onto the surface of e.g. SiO2 gate dielectrics functionalized with a self-assembled monolayer. Block copolymer phase behavior and surface morphology has been studied as a function of chain length, solvent and film thickness. Operational transistors have been demonstrated with film thicknesses of only one or two monolayers. Typical device characteristics show a carrier mobility on the order of 10-2 - 10-3 cm2/Vs and ON-OFF current ratio of 103 - 105. Film microstructure, orientation of micro-crystallites and film thickness have been studied by atomic force microscopy (AFM), UV-Vis absorption spectroscopy and X-ray diffraction.

Paper Details

Date Published: 21 December 2001
PDF: 9 pages
Proc. SPIE 4466, Organic Field Effect Transistors, (21 December 2001); doi: 10.1117/12.451476
Show Author Affiliations
Henrik G. O. Sandberg, Univ. of Cambridge and Abo Akademi Univ. (Finland)
Oliver Henze, Univ. of Durham (United Kingdom)
Henning Sirringhaus, Univ. of Cambridge (United Kingdom)
Andreas Kilbinger, Univ. of Durham (United Kingdom)
W. James Feast, Univ. of Durham (United Kingdom)
Richard H. Friend, Univ. of Cambridge (United Kingdom)


Published in SPIE Proceedings Vol. 4466:
Organic Field Effect Transistors
Denis Fichou; Zhenan Bao, Editor(s)

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