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Proceedings Paper

Laser-induced thermal desorption studies of surface reaction kinetics
Author(s): Steven M. George; Peter A. Coon; P. Gupta; M. L. Wise
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Paper Abstract

Laser induced thermal desorption (LITD) has proven to be an effective probe of reaction kinetics on single-crystal surfaces. The ability of LITD techniques to measure adsorption, decomposition and desorption kinetics will be illustrated by studies of SiCl4 and (CH3CH2)2 SiH2 on Si(111)7X7. Silicon tetrachloride, SiCl4, is important in silicon epitaxial growth and diethylsilane, (CH3CH2)2 SiH2, is a promising candidate for silicon atomic layer epitaxy. The desorption products, sticking coefficients and decomposition and desorption kinetics measured by these LITD investigations are important for an understanding of silicon epitaxy by chemical vapor deposition.

Paper Details

Date Published: 1 April 1991
PDF: 9 pages
Proc. SPIE 1437, Applied Spectroscopy in Material Science, (1 April 1991); doi: 10.1117/12.45141
Show Author Affiliations
Steven M. George, Stanford Univ. (United States)
Peter A. Coon, Stanford Univ. (United States)
P. Gupta, Stanford Univ. (United States)
M. L. Wise, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 1437:
Applied Spectroscopy in Material Science
David D. Saperstein, Editor(s)

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