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Proceedings Paper

Heat stability of Mo/Si multilayers inserted with silicon oxide layers
Author(s): Masahiko Ishino; Osamu Yoda; Kazuo Sano; Masato Koike
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Paper Abstract

The Mo/Si multilayers inserted with the SiO2 layers with 2.0 nm in thickness have been proven to be thermally more stable than the conventional Mo/Si multilayer. The Mo/Si/SiO2 multilayer inserted with the SiO2 layers at the Mo-on-Si interfaces had a relatively high soft X-ray reflectivity even after annealing at 400°C. The Mo/SiO2/Si/SiO2 multilayer was structurally the most stable against annealing but the soft X-ray reflectivity of this multilayer was quite small because of the absorption of X-rays by oxygen. To minimize the deterioration of the soft X-ray reflectivity of the Mo/SiO2/Si/SiO2 multilayer with keeping the high heat stability, the optimum thicknesses of the inserted SiO2 layers have been investigated. We have found that the Mo/SiO2/Si/SiO2 multilayer having asymmetric SiO2 layer thicknesses at the Si-on-Mo interface (0.5 nm) and at the Mo-on-Si interface (1.5 nm) has thermally the most stable structure and maintains a high soft X-ray reflectivity after annealing.

Paper Details

Date Published: 24 December 2002
PDF: 8 pages
Proc. SPIE 4782, X-Ray Mirrors, Crystals, and Multilayers II, (24 December 2002); doi: 10.1117/12.451346
Show Author Affiliations
Masahiko Ishino, Japan Atomic Energy Research Institute (Japan)
Osamu Yoda, Japan Atomic Energy Research Institute (Japan)
Kazuo Sano, Japan Atomic Energy Research Institute (Japan)
Shimadzu Scientific Research Inc. (Japan)
Masato Koike, Japan Atomic Energy Research Institute (Japan)


Published in SPIE Proceedings Vol. 4782:
X-Ray Mirrors, Crystals, and Multilayers II
Andreas K. Freund; Albert T. Macrander; Tetsuya Ishikawa; James L. Wood, Editor(s)

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