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Proceedings Paper

Growth and characterization of CdTe and CdZnTe crystals for substrate application
Author(s): Moshe Azoulay; Raphael Zilber; Sergy Shusterman; Alex Goldgirsh; Itzhak Zontag
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Paper Abstract

During the last decade we have investigated the synthesis, growth and characterization of CdTe and CdZnTe semiconductor compounds. As a result, substrate crystals, suitable for mercury cadmium telluride thin film growth are prepared. The emphasis will be given to the investigation of the thermal regime during growth, reflected at the solid liquid interface shape and its influence on the crystalline quality. Seeded and unseeded growth experiments are compared in terms of structural crystalline quality. Seeded and unseeded growth experiments are compared in terms of structural crystalline perfection as well as single crystal yield. The effect of thermal annealing on IR transmittance, precipitates and inclusions will be discussed in detail. Moreover, we will show the recent new trends for simulation of crystal growth processes by CRYSVUN software as well as practical implementation of calculated data for the grwoth of II-VI crystals. Preliminary study on the vapor phase control during growth and crystal cooling procedures will also be discussed.

Paper Details

Date Published: 23 January 2003
PDF: 19 pages
Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); doi: 10.1117/12.451221
Show Author Affiliations
Moshe Azoulay, Soreq Nuclear Research Ctr. (Israel)
Raphael Zilber, Soreq Nuclear Research Ctr. (Israel)
Sergy Shusterman, Soreq Nuclear Research Ctr. (Israel)
Alex Goldgirsh, Soreq Nuclear Research Ctr. (Israel)
Itzhak Zontag, Israel Ministry of Defense (Israel)


Published in SPIE Proceedings Vol. 4820:
Infrared Technology and Applications XXVIII
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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