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Proceedings Paper

Bufferlayer and caplayer engineering of Mo/Si EUVL multilayer mirrors
Author(s): Ulf Kleineberg; Thomas Westerwalbesloh; O. Wehmeyer; Michael Sundermann; Armin Brechling; Ulrich Heinzmann; Markus Haidl; Stefan Muellender
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Paper Abstract

Bufferlayer and caplayer engineering strategies are getting progressively important for improving crucial properties of EUVL multilayer optics and EUV reflection masks. While bufferlayers modifying the contact between the reflecting interference multilayer and the superpolished substrate aim for a partial smoothing of the residual substrate roughness or for a mitigation of local substrate defects as well as for multilayer film stress relaxation, surface caplayers are capable to enhance the multilayer reflectivity of EUV mirrors and masks. We present experimental results on various bufferlayer systems (singlelayer and multilayer) applied to different substrate materials (ULE, Zerodur, silicon). The bufferlayers have been deposited by e-beam evaporation and ion-polishing techniques at UHV conditions and substrates with and without bufferlayer have been coated with standard Mo/Si multilayers (50 doublelayers, d-spacing 6.8 nm) in the same deposition run. The samples have been analyzed exsitu by means of AFM, TEM, X-ray scattering and reflection and normal-incidence EUV reflectance measurements. We have found significant improvement (+ 0.7 %) of the Mo/Si multilayer EUV reflectivity for some bufferlayer systems applied to substrates with 0.2 - 0.3 nm r.m.s. high spatial frequency roughness (HSFR), while no effect was found on superpolished substrates exhibiting 0.1 nm r.m.s HSFR. The effect of caplayer modification applied to Mo/Si multilayers has been examined regarding EUV reflectivity. The native siliconoxide layer on top of the Mo/Si multilayer coatings has been replaced by an ultrathin (2 nm) chemically inert caplayer. We have found a 1 % - 1.5 % improvement in EUV peak reflectance for one cap material applied to several Mo/Si multilayer in comparison to a native siliconoxide cap.

Paper Details

Date Published: 20 December 2001
PDF: 8 pages
Proc. SPIE 4506, Soft X-Ray and EUV Imaging Systems II, (20 December 2001); doi: 10.1117/12.450951
Show Author Affiliations
Ulf Kleineberg, Univ. Bielefeld (Germany)
Thomas Westerwalbesloh, Univ. Bielefeld (Germany)
O. Wehmeyer, Univ. Bielefeld (Germany)
Michael Sundermann, Univ. Bielefeld (Germany)
Armin Brechling, Univ. Bielefeld (Germany)
Ulrich Heinzmann, Univ. Bielefeld (Germany)
Markus Haidl, Carl Zeiss (Germany)
Stefan Muellender, Carl Zeiss (Germany)

Published in SPIE Proceedings Vol. 4506:
Soft X-Ray and EUV Imaging Systems II
Daniel A. Tichenor; James A. Folta, Editor(s)

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