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Proceedings Paper

Liquid-xenon-jet laser-plasma source for EUV lithography
Author(s): Bjoern A. M. Hansson; Lars Rymell; Magnus Berglund; Oscar E. Hemberg; Emmanuelle Janin; Jalmar Thoresen; Hans M. Hertz
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Paper Abstract

The liquid-xenon-jet laser-plasma source is one of the extreme-ultraviolet (EUV) source technologies under development for EUV lithography. This paper discuss the basic, demanding, requirements of a source for EUV lithography including high in-band EUV power, absence of mirror contamination and high stability. It is further discussed how the liquid-xenon-jet can meet these requirements, and specifically how the ability to operate the plasma far from any mechanical details such as the nozzle will facilitate high power operation with low resulting mirror degradation. Furthermore, a new laser-to-EUV conversion efficiency result of 0.55%/(2%BW 2pisr) at lambda=13.45 nm is presented together with a detailed description of the method for calibrated EUV-power measurement.

Paper Details

Date Published: 20 December 2001
PDF: 8 pages
Proc. SPIE 4506, Soft X-Ray and EUV Imaging Systems II, (20 December 2001); doi: 10.1117/12.450943
Show Author Affiliations
Bjoern A. M. Hansson, Royal Institute of Technology and Innolite AB (Sweden)
Lars Rymell, Innolite AB (Sweden)
Magnus Berglund, Innolite AB (Sweden)
Oscar E. Hemberg, Royal Institute of Technology and Innolite AB (Sweden)
Emmanuelle Janin, Innolite AB (Sweden)
Jalmar Thoresen, Innolite AB (Sweden)
Hans M. Hertz, Royal Institute of Technology (Sweden)


Published in SPIE Proceedings Vol. 4506:
Soft X-Ray and EUV Imaging Systems II
Daniel A. Tichenor; James A. Folta, Editor(s)

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