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Proceedings Paper

Comparison of the optical characteristics of GaAs photocathodes grown using MBE and MOCVD
Author(s): Loig E. Bourree; David R. Chasse; P.L. Stephan Thamban; Robert Glosser
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Paper Abstract

Modern image tube intensifier photocathodes rely on a GaAs active layer, which has traditionally been grown using metallorganic chemical vapor deposition (MOCVD) due to its high throughput and lower cost of operation. Molecular beam epitaxy (MBE) processes have not been thoroughly investigated in that context. The latter technique demonstrates greater structural interface control as well as an improved growth quality for a multitude of applications. Still, at this point it is uncertain, considering actual fabrication techniques for image intensifiers, that the higher growth quality will result in an improvement of devices. Studies are being carried out to compare fundamental optical parameters between GaAs photocathodes grown by both MOCVD and MBE following the same growth and fabrication guidelines. These experiments involve using photoluminescence and Raman spectroscopy to obtain electron and phonon energy information on the materials. An atomic force microscope (AFM) is employed to compare the surface roughness of both methods. In addition, the white light responses of the photocathodes are also evaluated during the creation of a negative electron affinity (NEA) surface to observe any differences between the two growth techniques.

Paper Details

Date Published: 5 February 2003
PDF: 12 pages
Proc. SPIE 4796, Low-Light-Level and Real-Time Imaging Systems, Components, and Applications, (5 February 2003); doi: 10.1117/12.450887
Show Author Affiliations
Loig E. Bourree, Univ. of Texas at Dallas (United States)
David R. Chasse, MBE Specialist (United States)
P.L. Stephan Thamban, Univ. of Texas at Dallas (United States)
Robert Glosser, Univ. of Texas at Dallas (United States)


Published in SPIE Proceedings Vol. 4796:
Low-Light-Level and Real-Time Imaging Systems, Components, and Applications
C. Bruce Johnson; Divyendu Sinha; Phillip A. Laplante, Editor(s)

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