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Proceedings Paper

Resistivity dependence on Zn concentration in semi-insulating (Cd,Zn)Te
Author(s): Michael Fiederle; Alex Fauler; Vladimir N. Babentsov; Jan Franc; Klaus Werner Benz
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Paper Abstract

The resistivity dependence on Zn concentration had been investigated in semi-insulating (Cd,Zn)Te crystals grown by the vertical Bridgman method. A coorelation between the zinc concentration and the resistivity distribution could be found. The obtained resistivity was in the interval of 2 ×109-1010 Ω cm as expected from the model of compensation. The main deep compensating levels detected by Photo Induced Current Transient Spectroscopy (PICTS) were at 0.64 ± 0.02 eV and close the middle of the band gap at 0.80 ± 0.02 eV.

Paper Details

Date Published: 10 January 2003
PDF: 7 pages
Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); doi: 10.1117/12.450829
Show Author Affiliations
Michael Fiederle, Albert-Ludwigs-Univ. Freiburg (Germany)
Alex Fauler, Albert-Ludwigs-Univ. Freiburg (Germany)
Vladimir N. Babentsov, Albert-Ludwigs-Univ. Freiburg (Germany)
Jan Franc, Albert-Ludwigs-Univ. Freiburg (Germany)
Klaus Werner Benz, Albert-Ludwigs-Univ. Freiburg (Germany)

Published in SPIE Proceedings Vol. 4784:
X-Ray and Gamma-Ray Detectors and Applications IV
Ralph B. James; Larry A. Franks; Arnold Burger; Edwin M. Westbrook; Roger D. Durst; Edwin M. Westbrook; Roger D. Durst, Editor(s)

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