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Proceedings Paper

Preparation of semi-insulating CdTe by post-growth annealing
Author(s): Roman Grill; Ivan Turkevych; Jan Franc; Pavel Hoeschl; Eduard Belas; Pavel Moravec
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Paper Abstract

Thermodynamic conditions for a post growth annealing to prepare near stoichiometric semi-insulating (SI) of CdTe with a minimized concentration of point defects are looked for in undoped and Sn-doped single crystals. The high temperature (200-1000°C) in-situ conductivity σ and Hall effect measurements are used to control the native defect density and to find out the Cd pressure PCd at which shallow defects are compensated. We show, that contrary to the undoped samples, where the change of the type of conductivity by variations of PCd is easy, the Sn-doped samples exhibit due to the Sn self-compensation much more stable behavior. The temperature near 500°C is reported to be optimum for the real-time annealing of bulk samples. The chemical diffusion is sufficiently fast at this temperature, simultaneously the lower temperature is preferred because the native defect density can be tuned gently by changing PCd. The measurement of temperature dependencies of σ in annealed samples below 500°C is used to establish the position of Fermi level and to characterize the structure of both shallow and deep levels detected in the sample. The quasichemical formalism is used for evaluation of defect density and for analysis of nature of deep levels.

Paper Details

Date Published: 10 January 2003
PDF: 9 pages
Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); doi: 10.1117/12.450824
Show Author Affiliations
Roman Grill, Charles Univ. (Czech Republic)
Ivan Turkevych, Charles Univ. (Czech Republic)
Jan Franc, Charles Univ. (Czech Republic)
Pavel Hoeschl, Charles Univ. (Czech Republic)
Eduard Belas, Charles Univ. (Czech Republic)
Pavel Moravec, Charles Univ. (Czech Republic)


Published in SPIE Proceedings Vol. 4784:
X-Ray and Gamma-Ray Detectors and Applications IV
Ralph B. James; Larry A. Franks; Arnold Burger; Edwin M. Westbrook; Roger D. Durst; Edwin M. Westbrook; Roger D. Durst, Editor(s)

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