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Proceedings Paper

HPVB- and HPVZM-shaped growth of CdZnTe, CdSe, and ZnSe crystals
Author(s): Nikolai N. Kolesnikov; Ralph B. James; Nadejda S. Berzigiarova; Mihail P. Kulakov
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Paper Abstract

High-pressure Bridgman (HPVB) and vertical zone melting (HPVZM) growth has been applied for manufacturing Cd1-xZnxTe (x = 0.04 - 0.2), CdSe and ZnSe crystal tapes with sizes up to 120×120×12 mm. The influence of the technological parameters of the growth process on the crystal quality and some properties is discussed. The dependence of the inclusion (bubbles) content on deviation from the melt stoichiometry is determined. The method for growing plates with low content of the inclusions is described. High-resistivity crystal tapes of undoped CdZnTe (1010 Ohm×cm), CdSe (1011 Ohm×cm) and ZnSe (>1011 Ohm×cm) were prepared. Possibility of the tape growth on the oriented seed is shown on example of CdSe. The difference between HPVB and HPVZM results is described. Main HPVZM advantage for II-VI compound crystal growth is possibility of obtaining crystals with stoichiometric composition or with controlled deviation from stoichiometry. Hence HPVZM is preferable for growing high-resistivity II-VI crystals with low inclusion content.

Paper Details

Date Published: 10 January 2003
PDF: 12 pages
Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); doi: 10.1117/12.450814
Show Author Affiliations
Nikolai N. Kolesnikov, Institute of Solid State Physics (Russia)
Ralph B. James, Brookhaven National Lab. (United States)
Nadejda S. Berzigiarova, Institute of Solid State Physics (Russia)
Mihail P. Kulakov, Institute of Solid State Physics (Russia)

Published in SPIE Proceedings Vol. 4784:
X-Ray and Gamma-Ray Detectors and Applications IV
Ralph B. James; Edwin M. Westbrook; Roger D. Durst; Larry A. Franks; Arnold Burger; Edwin M. Westbrook; Roger D. Durst, Editor(s)

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