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Proceedings Paper

Comparative study of CsI(Tl) screens for macromolecular crystallography
Author(s): Sameer V. Tipnis; Vivek V. Nagarkar; Stuart R. Miller; Valeriy B. Gaysinskiy
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Paper Abstract

At RMD we have fabricated structured CsI(Tl) screens tailored for macromolecular x-ray crystallography applications. Diffraction patterns typically consist of several closely spaced Bragg peaks of varying sizes and intensities, and the detection of such features requires screens with high light output, high resolution, and excellent x-ray absorption. Properties of these screens, for example, light output or spatial resolution, were tailored by post deposition treatments to suit the specific needs of the application. Specifically, we have produced up to 45 micrometers thick CsI(Tl) screens with excellent resolution over the spatial frequency range of 0 to 20 lp/mm and very low noise. Imaging characteristics of these screens along with the commercial Gd2O2S (GOS) have been measured using a CCD detector with a fiberoptic taper. Performance of these screens in terms of point spread function (PSF(f)), light output, noise power spectrum (NPS(f)), and the modulation transfer function (MTF(f)) was measured. It is observed that the intrinsic properties of the structured CsI(Tl) screens are heavily influenced by the substrate on which the films are deposited and on the post deposition coatings, thus providing a latitude for modifying the screen properties to match the needs of the application.

Paper Details

Date Published: 19 December 2001
PDF: 5 pages
Proc. SPIE 4508, Penetrating Radiation Systems and Applications III, (19 December 2001); doi: 10.1117/12.450790
Show Author Affiliations
Sameer V. Tipnis, Radiation Monitoring Devices, Inc. (United States)
Vivek V. Nagarkar, Radiation Monitoring Devices, Inc. (United States)
Stuart R. Miller, Radiation Monitoring Devices, Inc. (United States)
Valeriy B. Gaysinskiy, Radiation Monitoring Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 4508:
Penetrating Radiation Systems and Applications III
H. Bradford Barber; Hans Roehrig; F. Patrick Doty; Richard C. Schirato; Edward J. Morton, Editor(s)

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