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Proceedings Paper

Evidence for dislocations or related defects present in CdTe and Cd1-xZnxTe crystals
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Paper Abstract

Thermoelectric Effect Spectroscopy and Thermally Stimulated Current measurements were used to investigate trapping levels in a semi-insulating CdTe and Cd1-xZnxTe crystals from multiple ingots grown by vertical Bridgman with over pressure control and high-pressure Bridgman methods. The crystals from different growth methods have different dislocation densities as well as Zn concentrations. The thermal ionization energies of these levels were extracted using both the variable heating rate and initial rise methods; the trapping cross sections were then calculated using the temperature maximum method. We report here that the shallow levels observed at E1=0.11+/- 0.02 and E2=0.17+/- 0.02 eV are intrinsic and the latter level is most likely related to the dislocation density.

Paper Details

Date Published: 18 December 2001
PDF: 9 pages
Proc. SPIE 4507, Hard X-Ray and Gamma-Ray Detector Physics III, (18 December 2001); doi: 10.1117/12.450770
Show Author Affiliations
Salah A. Awadalla, Washington State Univ. (United States)
Alan W. Hunt, Washington State Univ. (United States)
Russell B. Tjossem, Washington State Univ. (United States)
Kelvin G. Lynn, Washington State Univ. (United States)
Csaba Szeles, eV Products (United States)
Mary Bliss, Pacific Northwest National Lab. (United States)

Published in SPIE Proceedings Vol. 4507:
Hard X-Ray and Gamma-Ray Detector Physics III
Ralph B. James, Editor(s)

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