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Proceedings Paper

Pure and deep-level doped semi-insulating CdTe
Author(s): Pavel Hoschl; Roman Grill; Jan Franc; Eduard Belas; Lyudmyla Turjanska; Ivan Turkevych; Klaus-Werner Benz; Michael Fiederle
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Paper Abstract

Experimental conditions for a growth of near stoichiometric high resistive CdTe single crystals with a minimized concentration of point defects have to be defined. The position of the stoichiometric line in the pressure-temperature (P-T) phase diagram was evaluated from high-temperature in situ galvanomagntic measurements. Calculations based on a model of two major native defects (Cd vacancy and Cd interstitial) show, that a very small variation of Cd pressure P_{Cd} results in a strong generation of uncompensated native defects. Modelling of room temperature carrier density in dependence of the deep defect density NDD, PCd, and annealing temperature T shows, that the range of optimal PCd, at which the high resistivity can be reached, broadens with increasing NDD or decreasing T. It is shown, that at low T<450 degree(s)C the deep defect density <1015cm-3 is sufficient to grow the high resistive CdTe. CdTe doped with Vanadium is used as a model example.

Paper Details

Date Published: 18 December 2001
PDF: 9 pages
Proc. SPIE 4507, Hard X-Ray and Gamma-Ray Detector Physics III, (18 December 2001); doi: 10.1117/12.450769
Show Author Affiliations
Pavel Hoschl, Charles Univ. (Czech Republic)
Roman Grill, Charles Univ. (Czech Republic)
Jan Franc, Charles Univ. (Czech Republic)
Eduard Belas, Charles Univ. (Czech Republic)
Lyudmyla Turjanska, Charles Univ. (Czech Republic)
Ivan Turkevych, Charles Univ. (Czech Republic)
Klaus-Werner Benz, Albert-Ludwigs-Univ. Freiburg (Germany)
Michael Fiederle, Albert-Ludwigs-Univ. Freiburg (Germany)

Published in SPIE Proceedings Vol. 4507:
Hard X-Ray and Gamma-Ray Detector Physics III
Ralph B. James, Editor(s)

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