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Proceedings Paper

Tellurium antisites in CdZnTe
Author(s): Muren Chu; Sevag Terterian; David Ting; Ralph B. James; Jay Chris Erickson; H. Walter Yao; Terrance Thiem Lam; Marek Szawlowski; Richard W. Szczebiot
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Paper Abstract

The n-type conduction of CdTe and Cd0.96Zn0.04Te crystals grown from melts with excess tellurium indicates that the origin of the donors with an energy level at 0.01 eV below the conduction band are most likely singly ionized tellurium antisites instead of cadmium interstitials. Based on this model, the deep level at 0.75 eV below the conduction band is therefore doubly ionized tellurium antisites. After increasing the zinc content over 7%, CdZnTe turns to p-type. The conduction type variation of CdZnTe crystals as a function of zinc contents is explained by the compensation between the donors of Te-antisites and the acceptors of Cd vacancies. High resitivity Cd0.9Zn0.1Te crystals are produced by compensating the p-type crystals with indium at a low doping level of 1- 5x1015 cm-3. At room temperature, the high yield CdZnTe radiation detectors can resolve the six low energy peaks from the Am241 source, a performance comparable to the best reported CdZnTe detectors.

Paper Details

Date Published: 18 December 2001
PDF: 8 pages
Proc. SPIE 4507, Hard X-Ray and Gamma-Ray Detector Physics III, (18 December 2001); doi: 10.1117/12.450755
Show Author Affiliations
Muren Chu, Fermionics Corp. (United States)
Sevag Terterian, Fermionics Corp. (United States)
David Ting, Fermionics Corp. (United States)
Ralph B. James, Sandia National Labs. (United States)
Jay Chris Erickson, Sandia National Labs. (United States)
H. Walter Yao, Sandia National Labs. (United States)
Terrance Thiem Lam, Sandia National Labs. (United States)
Marek Szawlowski, Advanced Photonix, Inc. (United States)
Richard W. Szczebiot, Advanced Photonix, Inc. (United States)

Published in SPIE Proceedings Vol. 4507:
Hard X-Ray and Gamma-Ray Detector Physics III
Ralph B. James, Editor(s)

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