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Proceedings Paper

Integrated front-end electronics in a detector compatible process: source-follower and charge-sensitive preamplifier configurations
Author(s): Lodovico Ratti; Massimo Manghisoni; Valerio Re; Valeria Speziali
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Paper Abstract

This study is concerned with the simulation and design of low-noise front-end electronics monolithically integrated on the same high-resistivity substrate as multielectrode silicon detectors, in a process made available by the Istituto per la Ricerca Scientifica e Tecnologica (ITC-IRST) of Trento, Italy. The integrated front-end solutions described in this paper use N-channel JFETs as basic elements. The first one is based upon an all-NJFET charge preamplifier designed to match detector capacitances of a few picofarads and available in both a resistive and a non resistive feedback configuration. In the second solution, a single NJFET in the source-follower configuration is connected to the detector, while its source is wired to an external readout channel through an integrated capacitor.

Paper Details

Date Published: 18 December 2001
PDF: 11 pages
Proc. SPIE 4507, Hard X-Ray and Gamma-Ray Detector Physics III, (18 December 2001); doi: 10.1117/12.450752
Show Author Affiliations
Lodovico Ratti, Univ. degli Studi di Pavia (Italy)
Massimo Manghisoni, STMicroelectronics (Italy)
Valerio Re, Univ. degli Studi di Bergamo (Italy)
Valeria Speziali, Univ. degli Studi di Pavia (Italy)

Published in SPIE Proceedings Vol. 4507:
Hard X-Ray and Gamma-Ray Detector Physics III
Ralph B. James, Editor(s)

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