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Proceedings Paper

Extended backside-illuminated InGaAs on GaAs IR detectors
Author(s): Joachim John; Lars Zimmermann; Patrick Merken; Gustaaf Borghs; Chris A. Van Hoof; Stefan Nemeth
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Paper Abstract

Diode structures of short wavelength infrared (SWIR) InGaAs material were grown epitaxially on 3 inch GaAs substrates by molecular beam epitaxy. Despite the large lattice mismatch of 6% between In0.8Ga0.2As and GaAs the diode performance allows applications in spectroscopy and imaging. Photovoltaic diode characterization measures like R0A product and quantum efficiency were extracted from I-V curves. The layers are processed with standard photolithography and micro-structuring tools and finally flip-chip bonded on a silicon read out integrated circuit (ROIC). Linear arrays of 256 and 512 pixel with 25 mm pitch were fabricated as well as focal plane arrays (FPA) of 256 × 320 pixel with 30 mm pitch. Functionality is proven by using the assemblies in systems for spectroscopy and beam profiling up to 2.5 mm wavelength.

Paper Details

Date Published: 23 January 2003
PDF: 7 pages
Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); doi: 10.1117/12.450563
Show Author Affiliations
Joachim John, IMEC (Belgium)
Lars Zimmermann, IMEC (Belgium)
Patrick Merken, IMEC (Belgium)
Gustaaf Borghs, IMEC (Belgium)
Chris A. Van Hoof, IMEC (Belgium)
Stefan Nemeth, XenICs (Belgium)

Published in SPIE Proceedings Vol. 4820:
Infrared Technology and Applications XXVIII
Bjorn F. Andresen; Gabor F. Fulop; Marija Strojnik, Editor(s)

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