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Proceedings Paper

X-ray study of surfaces and interfaces
Author(s): Victor E. Asadchikov; Inna N. Bukreeva; Angela Duparre; Igor V. Kozhevnikov; Yury S. Krivonosov; Christian Morawe; Mikhail V. Pyatakhin; Joerg Steinert; Alexander V. Vinogradov; Eric Ziegler
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Paper Abstract

The analysis of the roughness of B4C films of different thickness as well as W/B4C multilayer mirrors of different periods is performed basing on AFM and x-ray scattering (XRS) measurements. It is demonstrated that the linear model of a film growth is able to describe the whole set of experimental data including films at initial island stage of growth, if suppose the relaxation processes of a film surface to depend on the film thickness. New approach to the inverse problem of x-ray reflectometry consisting in inferring the dielectric constant profile from the reflectivity data is shortly discussed.

Paper Details

Date Published: 10 December 2001
PDF: 12 pages
Proc. SPIE 4449, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries II, (10 December 2001); doi: 10.1117/12.450102
Show Author Affiliations
Victor E. Asadchikov, Institute of Crystallography (Russia)
Inna N. Bukreeva, P.N. Lebedev Physical Institute (Russia)
Angela Duparre, Fraunhofer Institut fuer Angewandte Optik und Feinmechanik (Germany)
Igor V. Kozhevnikov, P.N. Lebedev Physical Institute (Russia)
Yury S. Krivonosov, Institute of Crystallography (Russia)
Christian Morawe, European Synchrotron Radiation Facility (France)
Mikhail V. Pyatakhin, P.N. Lebedev Physical Institute (Russia)
Joerg Steinert, Fraunhofer Institut fuer Angewandte Optik und Feinmechanik (Germany)
Alexander V. Vinogradov, P.N. Lebedev Physical Institute (Russia)
Eric Ziegler, European Synchrotron Radiation Facility (France)


Published in SPIE Proceedings Vol. 4449:
Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries II
Angela Duparre; Bhanwar Singh, Editor(s)

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