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Proceedings Paper

Current blocking layer in GaN light-emitting diode
Author(s): Chul Huh; Ji-Myon Lee; Dong-Joon Kim; Seong-Ju Park
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Paper Abstract

InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) was fabricated using a SiO2 current blocking layer (CBL) inserted underneath the p-pad electrode. The forward voltage, Vf at 20 mA for InGaN/GaN MQW LED with a CBL(VF=3.5 V) was slightly higher than that of the conventional InGaN/GaN MQW LED(VF=3.4V) due to the reduction in the total area of p-type metal contact between the transparent Pt layer and the p-GaN. However, the light- output power for InGaN/GaN MQW LED with a CBL at 20 mA was significantly increased by 62% compared to that for the conventional InGaN/GaN MQW LED structure. This increase in the light-output power can be attributed to the more amount of current injected into the active area of the LED through the light-transmitting metal layer and a reduced parasitic optical absorption in the p-pad electrode.

Paper Details

Date Published: 5 December 2001
PDF: 7 pages
Proc. SPIE 4445, Solid State Lighting and Displays, (5 December 2001); doi: 10.1117/12.450040
Show Author Affiliations
Chul Huh, Kwangju Institute of Science and Technology (South Korea)
Ji-Myon Lee, Kwangju Institute of Science and Technology (South Korea)
Dong-Joon Kim, Kwangju Institute of Science and Technology (South Korea)
Seong-Ju Park, Kwangju Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 4445:
Solid State Lighting and Displays
Ian T. Ferguson; Yoon-Soo Park; Nadarajah Narendran; Steven P. DenBaars, Editor(s)

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