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Proceedings Paper

White light-emitting diodes with phase-separated InGaN active layers
Author(s): Yong-Tae Moon; Dong-Joon Kim; Jin-Sub Park; Jeong-Tak Oh; Nae-Man Park; Tae-Soo Kim; Seong-Ju Park
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Paper Abstract

We fabricated the white light-emitting diodes without phosphor materials using phase-separated InGaN active layers. The white luminescence was attributed to the broad distributions of indium composition and size of quantum dot- like In-rich regions in the phase-separated InGaN Ternary alloys.

Paper Details

Date Published: 5 December 2001
PDF: 6 pages
Proc. SPIE 4445, Solid State Lighting and Displays, (5 December 2001); doi: 10.1117/12.450028
Show Author Affiliations
Yong-Tae Moon, Kwangju Institute of Science and Technology (South Korea)
Dong-Joon Kim, Kwangju Institute of Science and Technology (South Korea)
Jin-Sub Park, Kwangju Institute of Science and Technology (South Korea)
Jeong-Tak Oh, Kwangju Institute of Science and Technology (South Korea)
Nae-Man Park, Kwangju Institute of Science and Technology (South Korea)
Tae-Soo Kim, Kwangju Institute of Science and Technology (South Korea)
Seong-Ju Park, Kwangju Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 4445:
Solid State Lighting and Displays
Ian T. Ferguson; Yoon-Soo Park; Nadarajah Narendran; Steven P. DenBaars, Editor(s)

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