Share Email Print
cover

Proceedings Paper

Near-field optical mapping using cantilevered nanoscopic Schottky diode tips
Author(s): Bjoern Rosner; Toralf Bork; Vivek Agrawal; Pavel Neuzil; Daniel W. van der Weide
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report on the application as well as microfabrication process of batch-fabricated optical near-field sensors using cantilevered scanning force microscopy tips. The process includes implementation of a coaxial conductive geometry into a silicon sensor tip, along with electrical connections on the cantilever and chip body. The coaxial guide structure is used as electric lead to a sub-micron Schottky photodetector at the end of the tip, formed at the junction of the protruding silicon core and a recessed aluminum coating. The I-V curves of these sensors are consistent with numerical studies for such constricted geometries. Optical near-field data gathered by this sensor in topography-following mode is presented.

Paper Details

Date Published: 5 December 2001
PDF: 7 pages
Proc. SPIE 4456, Controlling and Using Light in Nanometric Domains, (5 December 2001); doi: 10.1117/12.449530
Show Author Affiliations
Bjoern Rosner, Univ. of Wisconsin/Madison and Univ. of Delaware (United States)
Toralf Bork, MEDOS SA, Johnson & Johnson Co. (Switzerland)
Vivek Agrawal, JDS Uniphase (United States)
Pavel Neuzil, Institute of Microelectronics (Singapore)
Daniel W. van der Weide, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 4456:
Controlling and Using Light in Nanometric Domains
Aaron Lewis; H. Kumar Wickramasinghe; Katharina H.B. Al-Shamery, Editor(s)

© SPIE. Terms of Use
Back to Top