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Proceedings Paper

High-speed GaAs metal-semiconductor-metal photodetectors with sub-0.1um finger width and finger spacing
Author(s): Stephen Y. Chou; Mark Y. Liu; Paul B. Fischer
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Paper Abstract

We have fabricated metal-semiconductor-metal photodetectors with sub-100 nm finger spacing and finger width on MBE-grown GaAs, which are, to our knowledge, the smallest ever reported. Dc measurement shows that they have low dark current and high sensitivity. Monte- Carlo simulations demonstrate that the response time of the photodetectors for a 30 nm finger spacing can be as short as 0.4 ps, and the cut-off frequency can be over 1 THz.

Paper Details

Date Published: 1 September 1991
PDF: 5 pages
Proc. SPIE 1474, Optical Technology for Signal Processing Systems, (1 September 1991); doi: 10.1117/12.44928
Show Author Affiliations
Stephen Y. Chou, Univ. of Minnesota (United States)
Mark Y. Liu, Univ. of Minnesota (United States)
Paul B. Fischer, Univ. of Minnesota (United States)


Published in SPIE Proceedings Vol. 1474:
Optical Technology for Signal Processing Systems
Mark P. Bendett, Editor(s)

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