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Proceedings Paper

Bonding technologies for silicon scanning mirror having vertical comb fingers
Author(s): Jin-Ho Lee; Young-Chul Ko; Byoung-So Choi; Jong-Min Kim; Duk-Young Jeon
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Paper Abstract

A 1500 micrometers X 1200 micrometers silicon scanning mirror for laser display has been fabricated. This scanning mirror is mainly composed of two structures having vertical comb fingers. By anodic bonding of the silicon wafer and the Pyrex glass substrate, and followed deep ICPRIE (Inductively Coupled Plasma Reactive Ion Etching), isolated comb electrodes were fabricated at the lower structure. But in this anodic bonding, gold signal lines for electrical connection to the electrodes, which were inserted between silicon and Pyrex glass, were cut off by mechanical pressure or damaged to agglomerate by diffusion. To remove these phenomena, Pyrex glass was trenched about 2000 Angstroms in depth in the shape of signal lines, and Cr/Au signal lines were formed along the etched grooves about 500 Angstroms/3500 Angstroms in depth, and then annealed at 400 degree(s)C, N2 atmosphere, for 1 hour before anodic bonding. As a result, gold signal lines were successfully fabricated and the contact resistance was acquired below several tens ohms. By flip chip bonding, the upper and lower structure having vertical comb fingers were assembled. Vertical comb fingers of two structures were aligned with a microscope and the frames of two structures were bonded at 300 degree(s)C for 20 sec. using the eutectic bonding material, electroplated AuSn. Using these bonding technologies, the scanning mirror was successfully fabricated and it could be used for laser display as a galvanometric vertical scanner.

Paper Details

Date Published: 21 November 2001
PDF: 8 pages
Proc. SPIE 4592, Device and Process Technologies for MEMS and Microelectronics II, (21 November 2001); doi: 10.1117/12.448998
Show Author Affiliations
Jin-Ho Lee, Samsung Advanced Institute of Technology (South Korea)
Young-Chul Ko, Samsung Advanced Institute of Technology (South Korea)
Byoung-So Choi, Samsung Advanced Institute of Technology (South Korea)
Jong-Min Kim, Samsung Advanced Institute of Technology (South Korea)
Duk-Young Jeon, Korea Advanced Institute of Science and Technology (South Korea)

Published in SPIE Proceedings Vol. 4592:
Device and Process Technologies for MEMS and Microelectronics II
Jung-Chih Chiao; Lorenzo Faraone; H. Barry Harrison; Andrei M. Shkel, Editor(s)

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