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Proceedings Paper

Micro-machined tunable (Mi-T) VCSEL around 1.3 um
Author(s): Ali Benmoussa; Jun Tatebayashi; Jean-Philippe Gouy; Hiroyuki Fujita; Yasuhiko Arakawa
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Paper Abstract

Using silicon technology, our approach to tunable VCSEL uses a micromachined suspended deformable membrane that also function as the top mirror above the semiconductor cavity by an airgap. Here, we report the design of a microelectromechanical tunable VCSELs whose frequency is centered around 1300nm. Our Mi-T-VCSELs include: - A Quantum Dots (QDs) active region of InAs ((lambda) =1300nm), - An electrically tunable vertical resonant Fabry-Perot cavity, which is formed by an air-gap and a movable membrane suspended over the active component. Our QDs Mi-T VCSEL is based on semiconductor-coupled cavity (SCC) design, where the QDs are located inside a semiconductor cavity with thickness a multiple of (lambda) /2, and an air gap, with thickness an odd multiple of N (lambda) /4, is a part of top mirror. Optical behavior of the Mi-T VCSEL is analyzed by a transfer matrix approach that includes the individual properties of the various layers. We carried out mechanical simulations of the top mirrors structures, in order to design and determine all lateral and vertical dimensions. Tuning was achieved for an applied voltage between 0-30V across the air-gap. The usable range of deflection is ~500nm.

Paper Details

Date Published: 21 November 2001
PDF: 6 pages
Proc. SPIE 4592, Device and Process Technologies for MEMS and Microelectronics II, (21 November 2001); doi: 10.1117/12.448994
Show Author Affiliations
Ali Benmoussa, Univ. of Tokyo (Japan)
Jun Tatebayashi, Univ. of Tokyo (Japan)
Jean-Philippe Gouy, Univ. of Tokyo (Japan)
Hiroyuki Fujita, Univ. of Tokyo (Japan)
Yasuhiko Arakawa, Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 4592:
Device and Process Technologies for MEMS and Microelectronics II
Jung-Chih Chiao; Lorenzo Faraone; H. Barry Harrison; Andrei M. Shkel, Editor(s)

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