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Proceedings Paper

Processing compatibility of ZnO piezoelectric film with MEMS device
Author(s): Tao Xu; Guoying Wu; Guobing Zhang; Yilong Hao
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Paper Abstract

This paper presents the processing compatibility of ZnO piezoelectric film with MEMS devices. ZnO film has widely been used as an important element in the field of MEMS due to its good piezoelectric performance. The present investigations mainly focus on fabricating the ZnO film with good performance by optimizing the fabrication process. However, through our experiments, we found that further micromachining processes can badly modify the performance of ZnO film if they haven't been considered properly. Thus, different from other studies, this paper discusses techniques to keep the good piezoelectric performance of ZnO film in further processes after the ZnO film has been formed. These further processes for the device with ZnO film mostly include photolithography, wet and dry etching, stripping, cleaning, and depositing. The paper will present how these further processes change the performance of ZnO film and how to decrease or avoid the change of the performance, especially when the high temperature processes is needed. Some suggestion about process was given.

Paper Details

Date Published: 21 November 2001
PDF: 8 pages
Proc. SPIE 4592, Device and Process Technologies for MEMS and Microelectronics II, (21 November 2001); doi: 10.1117/12.448990
Show Author Affiliations
Tao Xu, Univ. of California/Irvine (United States)
Guoying Wu, Peking Univ. (China)
Guobing Zhang, Peking Univ. (China)
Yilong Hao, Peking Univ. (China)


Published in SPIE Proceedings Vol. 4592:
Device and Process Technologies for MEMS and Microelectronics II
Jung-Chih Chiao; Lorenzo Faraone; H. Barry Harrison; Andrei M. Shkel, Editor(s)

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